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02/23/2011 irlhs6242pbf hexfet power mosfet notes through are on page 2 features and benefits www.irf.com 1 applications ?

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note form quantity irlhs6242trpbf pqfn 2mm x 2mm tape and reel 4000 IRLHS6242TR2PBF pqfn 2mm x 2mm tape and reel 400 orderable part number package type standard pack features resulting benefits low r dson ( 11. ) 1) 1.0) ? v ds 20 v v gs 12 v r ds(on) max (@v gs = 4.5v) 11.7 m r ds(on) max (@v gs = 2.5v) 15.5 m i d (@t c (bottom) = 25c) 12 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 25c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 70c continuous drain current, vgs @ 4.5v i d @ t c(bottom) = 25c continuous drain current, v gs @ 4.5v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 1.98 0.016 9.6 max. 10 18 88 12 20 8.3 22 12 v w a c !"

2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. package is limited to 12a by die-source to lead-frame bonding technology. pulse width 400 s; duty cycle 2%. when mounted on 1 ich square copper board. r is measured at
for design aid only, not subject to production testing. calculated continuous current based on maximum allowable junction temperature. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 ??? ??? v ? . . ) . 11. 1. 1. ) 0. 0. 1.1 ) . 1.0 10 100 100 ??? 14 ??? v ds = 10v q gs gate-to-source charge ??? 1.5 ??? q gd gate-to-drain charge ??? 6.3 ??? r g gate resistance ??? 2.1 ??? t d(on) turn-on delay time ??? 5.8 ??? t r rise time ??? 15 ??? t d(off) turn-off delay time ??? 19 ??? t f fall time ??? 13 ??? c iss input capacitance ??? 1110 ??? c oss output capacitance ??? 260 ??? c rss reverse transfer capacitance ??? 180 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 15 23 ns q rr reverse recovery charge ??? 12 18 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v gs = 4.5v v gs = 12v v gs = -12v ??? ??? 88 ??? ??? 22 conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 4.5v, i d = 8.5a conditions see fig.15 ? = 1.0mhz t j = 25c, i f = 8.5a , v dd = 10v di/dt = 210a/ s t j = 25c, i s = 8.5a , v gs = 0v showing the integral reverse p-n junction diode. r g =1.8 v ds = 10v, i d = 8.5a v ds = 16v, v gs = 0v, t j = 125c a i d = 8.5a (see fig.17 & 18) id = 8.5a v gs = 0v v ds = 10v v ds = 16v, v gs = 0v v ds = v gs , i d = 10 a v gs = 2.5v, i d = 8.5a m v dd = 10v, v gs = 4.5v thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 13 r ) ??? 94 c/w r ??? 63 r 10) ??? 46

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.4v 60 s pulse width tj = 150c vgs top 10v 4.5v 3.0v 2.5v 2.0v 1.8v 1.5v bottom 1.4v 1.0 1.5 2.0 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 1.0 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 8.5a v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v v ds = 4.0v i d = 8.5a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.0v 2.5v 2.0v 1.8v 1.5v bottom 1.4v 60 s pulse width tj = 25c 1.4v

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25 a i d = 250 a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 i d , d r a i n c u r r e n t ( a ) limited by package 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec dc limited by wire bond 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v

www.irf.com 5 fig 13. typical on-resistance vs. drain current fig 12. on-resistance vs. gate voltage fig 15. typical power vs. time fig 14. maximum avalanche energy vs. drain current fig 16. #
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period (
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25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.2a 4.3a bottom 8.5a 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 100 200 300 400 500 600 s i n g l e p u l s e p o w e r ( w ) 0 2 4 6 8 10 12 14 16 v gs, gate -to -source voltage (v) 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 8.5a t j = 125c t j = 25c 0 10 20 30 40 50 60 70 i d , drain current (a) 5 10 15 20 25 30 35 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 2.5v vgs = 4.5v

6 www.irf.com fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 19a. switching time test circuit fig 19b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. gate charge test circuit fig 17b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s () 1 * % 0.1 + -

www.irf.com 7 pqfn 2x2 outline package details http://www.irf.com/technical-info/appnotes/an-1154.pdf
http://www.irf.com/package/ pqfn 2x2 outline part marking

8 www.irf.com pqfn 2x2 outline tape and reel

www.irf.com 9 qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2011 data and specifications subject to change without notice. ms l 1 (per jede c j-s t d-020d ??? ) rohs compliant yes pqfn 2mm x 2mm qualification information ? moisture sensitivity level qualification level cons umer ?? (per jede c je s d47f ??? guidelines )

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